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TIC106S - Thyristor

General Description

5A contimunous on-state current 30A surge-current Glass passivated Max IGT of 200μA 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC106D 400 VDRM Repe

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isc Thyristors INCHANGE Semiconductor TIC106series DESCRIPTION ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC106D 400 VDRM Repetitive voltage peakoff-state TIC106M TIC106S 600 700 V TIC106N 800 TIC106D 400 VRRM Repetitive voltage peakreverse TIC106M TIC106S 600 700 V TIC106N 800 IT(AV) IT(RMS) ITM PGM PG(AV) Tj Tstg On-state current Tc=80℃ RMS on-state current Tc=80℃ Surge peak on-state current Peak gate power PW≤300μs Average gate power Operating Junction temperature Storage temperature 3.2 A 5 A 30 A 1.3 W 0.3 W 110 ℃ -40 ~+125 ℃ isc Website：www.