Inchange Semiconductor TIC116D
Thyristors
| Part No. | TIC116D |
|---|---|
| Datasheet | TIC116D Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Thyristors |
| Buy | Stock & Price |
APPLICATIONS
●8A contimunous on-state current●80A surge-current
●Glass passivated
●Max IGT of 20mA
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current Tc=80℃ IT(RMS) RMS on-state current Tc=80℃ ITM Surge peak on-state current PGM Peak gate power PW≤300μs PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 400 400 5 8 80 5 1 110 -40 ~+125 3 62.5 UNIT V V A A A W W ℃ ℃ ℃/W ℃/WELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM, Tj=110℃ 2.0 mA IDRM Repetitive peak off-state current VRM=VRRM, Tj=110℃ 2.0 mA VTM On-state voltage ITM= 8A 1.7 V IGT Gate-trigg...