Inchange Semiconductor TIC116M
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | TIC116M |
|---|---|
| Datasheet | TIC116M Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Thyristors |
| Buy | Stock & Price |
DESCRIPTION
●8A contimunous on-state current●80A surge-current
●Glass passivated Wafer
●400V to 800V off-state Voltage
●Max IGT of 20mA
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC116D 400 VDRM Repetitive voltage peakoff-state TIC116M TIC116S 600 700 V TIC116N 800 TIC116D 400 VRRM Repetitive voltage peakreverse TIC116M TIC116S 600 700 V TIC116N 800 IT(AV) IT(RMS) ITM PGM PG(AV) Tj Tstg On-state current Tc=70℃ RMS on-state current Tc=70℃ Surge peak on-state current Peak gate power PW≤300μs Average gate power Operating Junction temperature Storage temperature 5 A 8 A 80 A 5 W 1 W 110 ℃ -40 ~+125 ℃ isc Website： 1 isc & iscsemi is registered trademark isc Thyristors THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor TIC116series MIN TYP MAX UNIT 3 ℃/W 62.5 ℃/W E...