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isc Thyristors
TIC116N
APPLICATIONS
·5A contimunous on-state current
·Glass passivated
·Max IGT of 20uA
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM Repetitive peak off-state voltage
800
V
VRRM Repetitive peak reverse voltage
800
V
IT(AV) On-state current Tc=80℃
5
A
ITSM
Surge non-repetitive on-state current TP=10ms
80
A
PGM Peak gate power PW≤300μs
5
W
PG(AV) Average gate power
1
W
Tj
Operating Junction temperature
-40 ~+125 ℃
Tstg Storage temperature
-40 ~+150 ℃
Rth(j-c) Thermal resistance, junction to case
1.5
℃/W
Rth(j-a) Thermal resistance, junction to ambient
60
℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
TIC116N Datasheet
