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TIC116S - Thyristor

Download the TIC116S datasheet PDF. This datasheet also covers the TIC116M variant, as both devices belong to the same thyristor family and are provided as variant models within a single manufacturer datasheet.

General Description

8A contimunous on-state current 80A surge-current Glass passivated Wafer 400V to 800V off-state Voltage Max IGT of 20mA 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO

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Note: The manufacturer provides a single datasheet file (TIC116M-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Thyristors INCHANGE Semiconductor TIC116series DESCRIPTION ·8A contimunous on-state current ·80A surge-current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC116D 400 VDRM Repetitive voltage peakoff-state TIC116M TIC116S 600 700 V TIC116N 800 TIC116D 400 VRRM Repetitive voltage peakreverse TIC116M TIC116S 600 700 V TIC116N 800 IT(AV) IT(RMS) ITM PGM PG(AV) Tj Tstg On-state current Tc=70℃ RMS on-state current Tc=70℃ Surge peak on-state current Peak gate power PW≤300μs Average gate power Operating Junction temperature Storage temperature 5 A 8 A 80 A 5 W 1 W