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TIC126S Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors INCHANGE Semiconductor TIC126series.

General Description

·12A contimunous on-state current ·100A surge-current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC126D 400 VDRM Repetitive voltage peakoff-state TIC126M TIC126S 600 700 V TIC126N 800 TIC126D 400 VRRM Repetitive voltage peakreverse TIC126M TIC126S 600 700 V TIC126N 800 IT(AV) IT(RMS) ITM PGM PG(AV) Tj Tstg On-state current Tc=70℃ RMS on-state current Tc=70℃ Surge peak on-state current Peak gate power PW≤300μs Average gate power Operating Junction temperature Storage temperature 7.5 A 12 A 100 A 5 W 1 W 110 ℃ -40 ~+125 ℃ isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Thyristors THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor TIC126series MIN TYP MAX UNIT 2.4 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ VTM On-state voltage ITM= 12A IGT Gate-trigger current VAA=12V;

RL=100Ω VGT Gate-trigger voltage VAA=12V;

RL=100Ω IH Holding current VAA=12V;IT= 100mA MIN TYP.

TIC126S Distributor