Sensitive Gate Triacs
6A RMS
Glass passivated Wafer
400V to 800V off-state Voltage
Max IGT of 5mA(Quadrants 1-3)
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARA
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isc Triacs
INCHANGE Semiconductor
TIC216series
DESCRIPTION ·Sensitive Gate Triacs ·6A RMS ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 5mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
TIC216D
400
VDRM
Repetitive voltage
peakoff-state TIC216M
TIC216S
600 700
V
TIC216N
800
TIC216D
400
VRRM
Repetitive voltage
peakreverse TIC216M
TIC216S
600 700
V
TIC216N
800
IT(RMS)
RMS on-state current (full sine wave)TC=70℃
6
A
ITSM Non-repetitive peak on-state current
60
A
PGM Peak gate power PW≤200μs
2.2
W
PG(AV) Average gate power
0.