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TIC216 - Triac

General Description

Sensitive Gate Triacs 6A RMS Glass passivated Wafer 400V to 800V off-state Voltage Max IGT of 5mA(Quadrants 1-3) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA

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isc Triacs INCHANGE Semiconductor TIC216series DESCRIPTION ·Sensitive Gate Triacs ·6A RMS ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 5mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC216D 400 VDRM Repetitive voltage peakoff-state TIC216M TIC216S 600 700 V TIC216N 800 TIC216D 400 VRRM Repetitive voltage peakreverse TIC216M TIC216S 600 700 V TIC216N 800 IT(RMS) RMS on-state current (full sine wave)TC=70℃ 6 A ITSM Non-repetitive peak on-state current 60 A PGM Peak gate power PW≤200μs 2.2 W PG(AV) Average gate power 0.