Inchange Semiconductor TIC226M
Triacs
| Part No. | TIC226M |
|---|---|
| Datasheet | TIC226M Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Triacs |
| Buy | Stock & Price |
FEATURES
●With TO-220 package●Sensitive Gate Triacs
●Glass Passivated
●Max IGT of 50 mA (Quadrants 1~3)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)TC=85℃ 8 A ITSM Non-repetitive peak on-state current 70 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~125 ℃ Rth(j-c) Thermal resistance, junction to case 1.8 ℃/W Rth(j-a) Thermal resistance, junction to ambient 62.5 ℃/WELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS TYP. MAX UNIT IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ 2.0 mA IGT Gate trigger current Ⅰ Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅲ Ⅳ 2 50 12 50 mA 9 50 20 IH Holding current Vsupply = 12 V†,IG= 0 initial ITM=100mA 30 mA VGT Gate trigger voltagea...