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TIC246 Datasheet Triac

Manufacturer: Inchange Semiconductor

Overview: isc Triacs INCHANGE Semiconductor TIC246series.

General Description

·High current Triacs ·16A RMS ,125A Peak Current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC246D 400 VDRM Repetitive voltage peakoff-state TIC246M TIC246S 600 700 V TIC246N 800 TIC246D 400 VRRM Repetitive voltage peakreverse TIC246M TIC246S 600 700 V TIC246N 800 IT(RMS) RMS on-state current (full sine wave)TC=70℃ 16 A ITSM Non-repetitive peak on-state current 125 A Tj Operating Junction temperature 110 ℃ Tstg Storage temperature -40 ~+125 ℃ isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor TIC246series THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient TYP MAX UNIT 1.9 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current Ⅰ VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ IGT Gate trigger current Ⅱ Vsupply = 12 V†;

RL= 10Ω;

tp(g) >20μs Ⅲ Ⅳ IH Holding current Vsupply = 12 V†,IG= 0 initial ITM=100mA Ⅰ VGT Gate trigger voltage Ⅱ Vsupply = 12 V†;

TIC246 Distributor