TIP101 Datasheet | Inchange Semiconductor

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor DESCRIPTION - High DC Current Gain- : hFE = 1000(Min)@ IC= 3A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A - plement to Type TIP106 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general-purpose amplifier and low-speed switching...