Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A
- plement to Type TIP137
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose amplifier and low-speed switching...
