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isc Silicon NPN Darlington Power Transistor
TIP160
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 320V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE (sat)= 2.9V(Max.)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in automotive ignition, switching and
motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
320
V
VCEO Collector-Emitter Voltage
320
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
1.