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TIP161 - NPN Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.9V(Max.)@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in automotive ignition, switc

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Datasheet Details

Part number TIP161
Manufacturer INCHANGE
File Size 217.93 KB
Description NPN Transistor
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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.9V(Max.)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive ignition, switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.
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