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TIP162 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 380V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.9V(Max.)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive ignition, switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 380 V VCEO Collector-Emitter Voltage 380 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.0 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W TIP162 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TIP162 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6.5A,IB= 0.1A 2.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A, IB= 1A 2.9 V VBE(sat) Base-Emitter Saturation Voltage IC= 6.5A,IB= 0.1A 2.2 V ICEO Collector Cutoff current VCE= 380V, IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V;