Datasheet4U Logo Datasheet4U.com

TIP34B Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·DC Current Gain- : hFE= 40(Min)@IC = -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type TIP33B ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A ICM Collector Current-peak -15 A IB Base Current -3 A PC Collector Power Dissipation@ TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W TIP34B isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TIP34B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;

TIP34B Distributor