Inchange Semiconductor TIP36CF
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | TIP36CF |
|---|---|
| Datasheet | TIP36CF Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE= 25(Min)@IC = -1.5A●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min)
●Complement to Type TIP35CF
●Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-peak -40 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W TIP36CF isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TIP36CFELECTRICAL CHARACTERISTICS
TC=25℃ un...