Datasheet Details
| Part number | TIP514 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.66 KB |
| Description | PNP Transistor |
| Download | TIP514 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor.
| Part number | TIP514 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.66 KB |
| Description | PNP Transistor |
| Download | TIP514 Download (PDF) |
|
|
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·Continuous Collector Current-IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Collector Power Dissipation- : PC= 20W @TC≤ 100℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and high speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -7.5 A IB Base Current-Continuous Collector Power Dissipation @Ta= 25℃ PC Collector Power Dissipation @TC≤100℃ TJ Junction Temperature -2 A 2 W 20 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W TIP514 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TIP514 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| TIP51 | NPN Transistor |
| TIP50 | NPN Transistor |
| TIP54 | NPN Transistor |
| TIP55A | NPN Transistor |
| TIP100 | NPN Transistor |
| TIP101 | NPN Transistor |
| TIP102 | NPN Transistor |
| TIP105 | PNP Transistor |
| TIP106 | PNP Transistor |
| TIP107 | PNP Transistor |