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TIP55A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors TIP55A.

General Description

·50W at 100℃ case temperature ·10A peak collector current ·High-voltage,high forward and reverse energy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition and switching regulator applications ·Characterized for operation in ignition and switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 8 V IC Collector Current -Continuous 7.5 A ICM Collector Current-peak 10 A IB Base Current 4 A PC Collector Power Dissipation@ TC=100℃ 50 W Tj Junction Temperature Tstg Storage Temperature 150 ℃ -65~15 0 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 20mA;

IB= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 5A;

IB= 1A VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 10A;