Download TK100E10N1 Datasheet PDF
TK100E10N1 page 2
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Datasheet Summary

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E10N1,ITK100E10N1 - Features - Low drain-source on-resistance: RDS(on) ≤3.4mΩ. (VGS = 10 V) - Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Switching Voltage Regulators -...