Datasheet4U Logo Datasheet4U.com

TK10E80W - N-Channel MOSFET

Features

  • br>.
  • Low drain-source on-resistance: RDS(on) ≤0.55Ω.
  • Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.45mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

  • TK10E80W - N-Channel MOSFET (Toshiba)
  • TK10E60W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100A06N1 - MOSFETs (Toshiba Semiconductor)
  • TK100A08N1 - MOSFETs (Toshiba Semiconductor)
  • TK100A10N1 - Silicon N-Channel MOSFET (Toshiba)
  • TK100E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100E08N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100E10N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100F04K3 - Silicon N-Channel MOSFET (Toshiba)
  • TK100F04K3L - MOSFETs (Toshiba Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10E80W，ITK10E80W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.55Ω. ·Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.5 IDM Drain Current-Single Pulsed 38 PD Total Dissipation @TC=25℃ 130 Tj Max.
Published: |