Datasheet4U Logo Datasheet4U.com

TK10P50W - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(ON) = 0.38Ω(MAX).
  • Easy to control Gate switching.
  • Enhancement mode: VTH = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TK10P50W

Datasheet Details

Part number TK10P50W
Manufacturer INCHANGE
File Size 284.74 KB
Description N-Channel MOSFET
Datasheet download datasheet TK10P50W Datasheet
Additional preview pages of the TK10P50W datasheet.

📁 Similar Datasheet

  • TK10P50W - N-Channel MOSFET (Toshiba)
  • TK10P60W - N-Channel MOSFET (Toshiba Semiconductor)
  • TK100A06N1 - MOSFETs (Toshiba Semiconductor)
  • TK100A08N1 - MOSFETs (Toshiba Semiconductor)
  • TK100A10N1 - Silicon N-Channel MOSFET (Toshiba)
  • TK100E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100E08N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100E10N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100F04K3 - Silicon N-Channel MOSFET (Toshiba)
  • TK100F04K3L - MOSFETs (Toshiba Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω(MAX) ·Easy to control Gate switching ·Enhancement mode: VTH = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 9.7 A IDM Drain Current-Single Pulsed 38.8 A PD Total Dissipation @TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
Published: |