Datasheet Summary
isc N-Channel MOSFET Transistor
Features
- Low drain-source on-resistance:
RDS(on) ≤0.3Ω.
- Enhancement mode:
Vth =3 to 4.5V (VDS = 10 V, ID=0.69mA)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRITION
- Switching Voltage Regulators
-...
