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TK16J60W - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-3PN packaging.
  • High speed switching.
  • Standard level gate drive.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK16J60W

Datasheet Details

Part number TK16J60W
Manufacturer INCHANGE
File Size 205.95 KB
Description N-Channel MOSFET
Datasheet download datasheet TK16J60W Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK16J60W ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 15.8 IDM Drain Current-Single Pulsed 63.2 PD Total Dissipation 130 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
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