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TK16J60W5 - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(on) ≤0.23Ω.
  • Enhancement mode: Vth =3.0 to 4.5V (VDS = 10 V, ID=0.79mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK16J60W5

Datasheet Details

Part number TK16J60W5
Manufacturer INCHANGE
File Size 265.43 KB
Description N-Channel MOSFET
Datasheet download datasheet TK16J60W5 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor TK16J60W5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.23Ω. ·Enhancement mode: Vth =3.0 to 4.5V (VDS = 10 V, ID=0.79mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 15.8 A IDM Drain Current-Single Pulsed 63.2 A PD Total Dissipation @TC=25℃ 130 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.962 ℃/W isc website：www.iscsemi.
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