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TK17E80W - N-Channel MOSFET

Datasheet Summary

Features

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  • Low drain-source on-resistance: RDS(on) ≤0.29Ω.
  • Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.85mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK17E80W

Datasheet Details

Part number TK17E80W
Manufacturer INCHANGE
File Size 242.24 KB
Description N-Channel MOSFET
Datasheet download datasheet TK17E80W Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK17E80W，ITK17E80W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.29Ω. ·Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.85mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 68 PD Total Dissipation @TC=25℃ 180 Tj Max.
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