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iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) = 0.26Ω(MAX) ·Low leakage current:
IDSS = 100 µA (max) (VDS = 650 V) ·Enhancement mode:
Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
13.7
A
IDM
Drain Current-Single Pulsed
34
A
PD
Total Dissipation @TC=25℃
45
W
Tj
Max.
TK17J65U Datasheet
