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TK17J65U Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: iscN-Channel MOSFET Transistor ·.

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Key Features

  • Low drain-source on-resistance: RDS(on) = 0.26Ω(MAX).
  • Low leakage current: IDSS = 100 µA (max) (VDS = 650 V).
  • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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