Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Low drain-source on-resistance:
RDS(ON) ≤ 175mΩ
- Easy to control Gate switching
- Enhancement mode:
Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Switching Voltage Regulators
-...
