Datasheet Summary
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK22E10N1，ITK22E10N1
- Features
- Low drain-source on-resistance:
RDS(on) ≤13.8mΩ. (VGS = 10 V)
- Enhancement mode:
Vth =2.0 to 4.0V (VDS = 10 V, ID=0.3mA)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Switching Voltage Regulators
-...
