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TK25A60X - N-Channel MOSFET

Key Features

  • Low drain-source on-resistance: RDS(ON) = 0.105Ω (typ. ).
  • High-speed switching properties with lower capacitance.
  • Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.2mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK25A60X,ITK25A60X ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.105Ω (typ.) ·High-speed switching properties with lower capacitance. ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 25 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 45 Tj Max.