Datasheet4U Logo Datasheet4U.com

TK290A60Y - N-Channel MOSFET

Features

  • Low drain-source on-resistance: RDS(ON) = 0.29Ω (typ. ).
  • Easy to control Gate switching.
  • Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TK290A60Y

Datasheet Details

Part number TK290A60Y
Manufacturer INCHANGE
File Size 248.57 KB
Description N-Channel MOSFET
Datasheet download datasheet TK290A60Y Datasheet
Additional preview pages of the TK290A60Y datasheet.

📁 Similar Datasheet

  • TK290A60Y - Silicon N-Channel MOSFET (Toshiba)
  • TK290A65Y - Silicon N-Channel MOSFET (Toshiba)
  • TK290P60Y - Silicon N-Channel MOSFET (Toshiba)
  • TK290P65Y - Silicon N-Channel MOSFET (Toshiba)
  • TK200F04N1L - Silicon N-Channel MOSFET (Toshiba)
  • TK2019 - STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
  • TK2050 - STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
  • TK2051 - STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
  • TK2070 - STEREO 70W (4Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
  • TK20A - Current Transducer (Topstek)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK290A60Y,ITK290A60Y ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.29Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 11.5 IDM Drain Current-Single Pulsed 46 PD Total Dissipation @TC=25℃ 35 Tj Max.
Published: |