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TK290P65Y - N-Channel MOSFET

Features

  • Low drain-source on-resistance: RDS(ON) = 0.29Ω.
  • Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK290P65Y

Datasheet Details

Part number TK290P65Y
Manufacturer INCHANGE
File Size 274.00 KB
Description N-Channel MOSFET
Datasheet download datasheet TK290P65Y Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK290P65Y ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.29Ω ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 11.5 A IDM Drain Current-Single Pulsed 46 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
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