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TK30E06N1 - N-Channel MOSFET

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INCHANGE

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TK30E06N1 N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – TK30E06N1

Datasheet Details

Part number	TK30E06N1
Manufacturer	INCHANGE
File Size	241.84 KB
Description	N-Channel MOSFET
Datasheet	TK30E06N1 Datasheet
Additional preview pages of the TK30E06N1 datasheet.

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Features

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Low drain-source on-resistance: RDS(on) ≤15.0mΩ. (VGS = 10 V).
Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.2mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 4, 2020 |