Download TK31N60W5 Datasheet PDF
Inchange Semiconductor
TK31N60W5
TK31N60W5 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Low drain-source on-resistance: RDS(on) ≤0.099Ω. - Enhancement mode: Vth =3 to4.5V (VDS = 10 V, ID=15.4A) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Switching Voltage Regulators - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage ±30 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.543...