Datasheet4U Logo Datasheet4U.com

TK35A08N1 - N-Channel MOSFET

Features

  • br>.
  • Low drain-source on-resistance: RDS(ON) = 12.0mΩ (VGS = 10 V).
  • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TK35A08N1

Datasheet Details

Part number TK35A08N1
Manufacturer INCHANGE
File Size 247.89 KB
Description N-Channel MOSFET
Datasheet download datasheet TK35A08N1 Datasheet
Additional preview pages of the TK35A08N1 datasheet.

📁 Similar Datasheet

  • TK35A08N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK35A65W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK35A65W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK35E08N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK35N65W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK35N65W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK35S04K3L - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK30A06J3A - MOSFET (Toshiba Semiconductor)
  • TK30A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK30E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK35A08N1，ITK35A08N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 12.0mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 116 PD Total Dissipation @TC=25℃ 30 Tj Max.
Published: |