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TK380A60Y - N-Channel MOSFET

Features

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  • Low drain-source on-resistance: RDS(ON) = 0.38Ω (typ. ).
  • by using Super Junction Structure : DTMOS.
  • Easy to control Gate switching.
  • Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number TK380A60Y
Manufacturer INCHANGE
File Size 248.88 KB
Description N-Channel MOSFET
Datasheet download datasheet TK380A60Y Datasheet
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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK380A60Y，ITK380A60Y ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω (typ.) ·by using Super Junction Structure : DTMOS ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9.7 IDM Drain Current-Single Pulsed 38.8 PD Total Dissipation @TC=25℃ 30 Tj Max.
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