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TK39A60W - N-Channel MOSFET

Features

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  • Low drain-source on-resistance: RDS(ON) = 0.065Ω.
  • Easy to control Gate switching.
  • Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.9mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK39A60W，ITK39A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.065Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 38.8 IDM Drain Current-Single Pulsed 155 PD Total Dissipation @TC=25℃ 50 Tj Max.
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