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TK39N60W - N-Channel MOSFET

Features

  • With TO-247 packaging.
  • With low gate drive requirements.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 38.8 IDM Drain Current-Single Pulsed 155 PD Total Dissipation 270 Tj Operating Junction Temperature -50~150 Tstg Storage Temperature -50~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.46 UNIT ℃/W TK39N60W isc website：www.iscsemi.
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