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TK3R1P04PL - N-Channel MOSFET

Features

  • Low drain-source on-resistance: RDS(ON) = 3.1mΩ (MAX) (VGS = 10 V).
  • Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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iscN-Channel MOSFET Transistor TK3R1P04PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.1mΩ (MAX) (VGS = 10 V) ·Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 58 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 87 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 1.
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