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isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.56Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Plused
28
A
PD
Total Dissipation @TC=25℃
60
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.
TK560P60Y Datasheet
