Datasheet4U Logo Datasheet4U.com

TK560P65Y - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(ON) = 0.56Ω.
  • Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TK560P65Y

Datasheet Details

Part number TK560P65Y
Manufacturer INCHANGE
File Size 238.82 KB
Description N-Channel MOSFET
Datasheet download datasheet TK560P65Y Datasheet
Additional preview pages of the TK560P65Y datasheet.

📁 Similar Datasheet

  • TK560P65Y - Silicon N-Channel MOSFET (Toshiba)
  • TK560P60Y - Silicon N-Channel MOSFET (Toshiba)
  • TK560A60Y - Silicon N-Channel MOSFET (Toshiba)
  • TK560A65Y - Silicon N-Channel MOSFET (Toshiba)
  • TK56A12N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK56E12N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK50A04K3 - MOSFETs (Toshiba Semiconductor)
  • TK50F15J1 - MOSFETs (Toshiba Semiconductor)
  • TK50J30D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK50J60U - MOSFETs (Toshiba Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK560P65Y ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.56Ω ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7 IDM Drain Current-Single Pulsed 28 PD Total Dissipation @TC=25℃ 60 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.08 UNIT ℃/W isc website：www.
Published: |