Datasheet4U Logo Datasheet4U.com

TK5A55D - N-Channel MOSFET

Datasheet Summary

Features

  • br>.
  • Low drain-source on-resistance: RDS(ON) = 1.4Ω (typ. ).
  • Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TK5A55D

Datasheet Details

Part number TK5A55D
Manufacturer INCHANGE
File Size 246.99 KB
Description N-Channel MOSFET
Datasheet download datasheet TK5A55D Datasheet
Additional preview pages of the TK5A55D datasheet.

📁 Similar Datasheet

  • TK5A55D - N-Channel MOSFET (Toshiba Semiconductor)
  • TK5A50D - N-Channel MOSFET (Toshiba Semiconductor)
  • TK5A50D5 - Silicon N-Channel MOSFET (Toshiba)
  • TK5A53D - N-Channel MOSFET (Toshiba Semiconductor)
  • TK5A - Current Transducer (Topstek)
  • TK5A45DA - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK5A60D - N-Channel MOSFET (Toshiba)
  • TK5A60D - N-Channel 650V Power MOSFET (VBsemi)
  • TK5A60W - MOSFETs (Toshiba Semiconductor)
  • TK5A60W5 - N-Channel MOSFET (Toshiba)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A55D，ITK5A55D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.4Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 550 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 5 IDM Drain Current-Single Pulsed 20 PD Total Dissipation @TC=25℃ 35 Tj Max.
Published: |