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TK5A90E - N-Channel MOSFET

Datasheet Summary

Features

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  • Low drain-source on-resistance: RDS(on) ≤3.1Ω.
  • Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.45mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK5A90E

Datasheet Details

Part number TK5A90E
Manufacturer INCHANGE
File Size 235.25 KB
Description N-Channel MOSFET
Datasheet download datasheet TK5A90E Datasheet
Additional preview pages of the TK5A90E datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK5A90E，ITK5A90E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.1Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 13.5 PD Total Dissipation @TC=25℃ 40 Tj Max.
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