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TK5Q60W - N-Channel MOSFET

Features

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  • Low drain-source on-resistance: RDS(on) ≤900mΩ.
  • Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.27mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK5Q60W

Datasheet Details

Part number TK5Q60W
Manufacturer INCHANGE
File Size 229.26 KB
Description N-Channel MOSFET
Datasheet download datasheet TK5Q60W Datasheet
Additional preview pages of the TK5Q60W datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK5Q60W，ITK5Q60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤900mΩ. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.27mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 5.4 IDM Drain Current-Single Pulsed 21.6 PD Total Dissipation @TC=25℃ 60 Tj Max.
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