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TK6P65W - N-Channel MOSFET

Key Features

  • Low drain-source on-resistance: RDS(on) ≤1.05Ω.
  • Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Brand Logo Part Number Description Manufacturer
Toshiba Logo TK6P65W N-Channel MOSFET Toshiba

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Full PDF Text Transcription for TK6P65W (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TK6P65W. For precise diagrams, tables, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor TK6P65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.05Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA) ·100% avala...

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Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 5.8 A IDM Drain Current-Single Pulsed 23.2 A PD Total Dissipation @TC=25℃ 60 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.09 UNIT ℃/W isc we