Datasheet4U Logo Datasheet4U.com

TK6Q65W - N-Channel MOSFET

Features

  • br>.
  • Low drain-source on-resistance: RDS(on) ≤1.05Ω.
  • Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK6Q65W N-Channel MOSFET Toshiba
TK6Q60W Silicon N-Channel MOSFET Toshiba Semiconductor
TK60A08J1 MOSFETs Toshiba Semiconductor
TK60D08J1 MOSFET Toshiba Semiconductor
TK60F08K3 MOSFETs Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
TK6Q60W N-Channel MOSFET
TK60J25D N-Channel MOSFET
TK62J60W N-Channel MOSFET
TK62J60W5 N-Channel MOSFET
TK62N60W N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK6Q65W，ITK6Q65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.05Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 5.8 IDM Drain Current-Single Pulsed 23.2 PD Total Dissipation @TC=25℃ 60 Tj Max.
Published: |