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TK6R7P06PL - N-Channel MOSFET

Features

  • Low drain-source on-resistance: RDS(ON) = 6.7mΩ (MAX) (VGS = 10 V).
  • Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK6R7P06PL

Datasheet Details

Part number TK6R7P06PL
Manufacturer INCHANGE
File Size 284.07 KB
Description N-Channel MOSFET
Datasheet download datasheet TK6R7P06PL Datasheet
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Full PDF Text Transcription

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iscN-Channel MOSFET Transistor TK6R7P06PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 6.7mΩ (MAX) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 46 A IDM Drain Current-Single Pulsed 190 A PD Total Dissipation @TC=25℃ 66 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 2.
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