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TK7E80W - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(on) ≤0.95Ω.
  • Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.28mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Part Number Description Manufacturer
TK7E80W Silicon N-Channel MOSFET Toshiba

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK7E80W，ITK7E80W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.95Ω. ·Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.28mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.5 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 110 Tj Max.