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TK80A04K3L - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(ON) = 2.4mΩ (typ. ) (VGS = 10 V).
  • Enhancement mode: Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK80A04K3L，ITK80A04K3L ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.4mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 48 Tj Max.