TK8A65W Overview
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK8A65W，ITK8A65W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.53Ω (typ.) ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·
TK8A65W Key Features
- Low drain-source on-resistance: RDS(ON) = 0.53Ω (typ.) -Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.3mA) -100%
- DESCRITION -Switching Voltage Regulators
