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isc N-Channel MOSFET Transistor
TK8P65W
·FEATURES ·Drain Current ID= 7.8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.67Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
7.8
A
IDM
Drain Current-Single Plused
31.2
A
PD
Total Dissipation @TC=25℃
80
W
Tj
Max.
TK8P65W Datasheet
